Education:

• 2007-2010:     Ph.D. in Electronic Engineering, Università degli Studi “Roma Tre” (Rome, Italy). Thesis: “Charge Control Devices based on Wide Band Gap Semiconductors”, Tutor: G. Conte

• 2000-2006:     Laurea (5 years degree) in Electronic Engineering, Università degli Studi “Roma Tre” (Rome, Italy). Thesis: “Single Crystal Diamond based FETs: technology, performance and limitation”, Tutor: G. Conte

 

Post degree education:

• Nanoscale CMOS and Si-based beyond CMOS nanodevice - International Schoolon advanced Microelectronics MIGAS’08 - 11th session

• Tecnologia, Progettazione ed Economia degli Impianti Fotovoltaici – Ordine degli Ingegneri, provincia di Roma

• RF IC design in nanometer CMOS – P. Andreani (Department of Electrical and Information Technology, Lund University, Sweden)

• Techniques for accurate nanotech electrical measurements (low current, lowvoltage, low power resistance) - Keithley Instruments

• Materials for Renewable Energy (56th Course of International School of Solid State Physics) – Foundation and Centre for Scientific Culture Ettore Majorana

 

Professional Experience:

• February 2012 –now: CNR - IMIP, Developing and Engineering of Thermionic Emission Stages and Electronic Devices on CVD Diamond

• February 2011 – February 2012: CNR - ISM, Post Doc Researcher on Deposition and Characterization of Nanostructured Magnetic Materials. Software and Hardware interface realization for Pulsed Laser Deposition system. Magnetic nanoparticles morphological characterization.

• December 2010 – Jenuary 2012: Project Manager for Servizi Gestiti Srl (Rome, IT), Projecting and business developing for renewable energies based systems

• February 2010 - July 2010: Chief Scientist & Production Manager Assistant for Diamond Detectors Ltd (Poole, UK). Diamond Detectors Ltd was a spin-off of Element Six Ltd shared by BAE Systems. R&D of UV, Alpha and Gamma Detectors based on Element Six diamond. Development of the first SCD Quadrant Detector for Trieste synchrotron. Developed diamond based field effect transistors based on DDL proprietary ohmic contact.

• May 2007 - October 2007: Research Assistant at Università degli Studi Roma Tre (Rome, IT) for R&D of High Frequency - High Power Wide Band gap Semiconductors based Devices. Carbon and GaN nanotubes characterization. Photovoltaic Cells Characterization.

 

Main Relevant Papers

• P. Calvani, a. Corsaro, M. Girolami, F. Sinisi, D. M. M. Trucchi, M. C. C. Rossi, G. Conte, S. Carta, E. Giovine, S. Lavanga, E. Limiti, and V. Ralchenko, “DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond,” Diamond and Related Materials, vol. 18, no. 5–8, pp. 786–788, May 2009.

• P. Calvani, F. Sinisi, M. C. Rossi, G. Conte, E. Giovine, W. Ciccognani, and E. Limiti, “K-band diamond MESFETs for RFIC technology,” 2009 IEEE Radio Frequency Integrated Circuits Symposium, pp. 355–358, Jun. 2009.

• P.Calvani, M. C. Rossi, G. Conte, S. Carta, E. Giovine, B. Pasciuto, E. Limiti, F. Cappelluti, V. Ralchenko, A. Bolshakov, G. Sharonov, “MESFETs on H-terminated Single Crystal Diamond,” MRS Proceedings, vol. 1203, 2009.

• B. Pasciuto, W. Ciccognani, E. Limiti, A. Serino, P. Calvani, A. Corsaro, G. Conte, and M. C. Rossi, “Modeling of Diamond Field Effect Transistor For RF IC Development”, Microwave and Optical Technology Letters, vol. 51, no. 11, pp. 2783–2786, 2009.

• M. C. Rossi, a. Minutello, S. Carta, P. Calvani, G. Conte, and V. Ralchenko, “Charge carrier transport anisotropy in ultrananocrystalline diamond films,” Diamond and Related Materials, vol. 19, no. 2–3, pp. 238–241, Feb. 2010.

• P. Calvani, G. Conte, D. Dominijanni, E. Giovine, B. Pasciuto, and E. Limiti, “Hydrogen terminated diamond MESFETs: New technology for RF power applications,” Microwave Integrated Circuits Conference (EuMIC), 2010 European, no. September, pp. 122–125, 2010.

• V. Camarchia, F. Cappelluti, G. Ghione, M. C. C. Rossi, P. Calvani, G. Conte, B. Pasciuto, E. Limiti, D. Dominijanni, and E. Giovine, “RF power performance evaluation of surface channel diamond MESFETs,” Solid-State Electronics, vol. 55, no. 1, pp. 19–24, Jan. 2011.

• D. M. Trucchi, P. Allegrini, P. Calvani, a. Galbiati, K. Oliver, and G. Conte, “Very Fast and Primingless Single-Crystal-Diamond X-Ray Dosimeters,” IEEE Electron Device Letters, vol. 33, no. 4, pp. 615–617, Apr. 2012.